Basic semiconductor physics / (Record no. 325)

MARC details
000 -LEADER
fixed length control field 03521nam a2200373 i 4500
001 - CONTROL NUMBER
control field 19861123
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20220327075950.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 170803s2017 nyua b 001 0 eng d
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2017951190
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319668598
Qualifying information hardback
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Language of cataloging eng
Description conventions rda
Transcribing agency DLC
Modifying agency EG-CaTKH
042 ## - AUTHENTICATION CODE
Authentication code pcc
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622 HA.B 2017
Edition number 22
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Hamaguchi, Chihiro,
Dates associated with a name 1937-
Relator term author.
245 10 - TITLE STATEMENT
Title Basic semiconductor physics /
Statement of responsibility, etc. Chihiro Hamaguchi.
250 ## - EDITION STATEMENT
Edition statement Third edition.
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE
Place of production, publication, distribution, manufacture Cham, Switzerland :
Name of producer, publisher, distributor, manufacturer Springer,
Date of production, publication, distribution, manufacture, or copyright notice 2017.
300 ## - PHYSICAL DESCRIPTION
Extent xxi, 709 pages :
Other physical details illustrations ;
Dimensions 24 cm.
336 ## - CONTENT TYPE
Content type term text
Content type code txt
Source rdacontent
337 ## - MEDIA TYPE
Media type term unmediated
Media type code n
Source rdamedia
338 ## - CARRIER TYPE
Carrier type term volume
Carrier type code nc
Source rdacarrier
490 1# - SERIES STATEMENT
Series statement Graduate texts in physics,
International Standard Serial Number 1868-4513
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc. note Includes bibliographical references and index.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Preface to the Third Edition -- Energy Band Structures of Semiconductors -- Cyclotron Resonance and Energy Band Structures -- Wannier Function and Effective Mass Approximation -- Optical Properties 1 -- Optical Properties 2 -- Electron-Phonon Interaction and Electron Transport -- Magnetotransport Phenomena -- Quantum Structures -- Light Emission and Laser.
520 ## - SUMMARY, ETC.
Summary, etc. This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency. .
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name entry element Semiconductors.
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Graduate texts in physics.
International Standard Serial Number 1868-4513.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Books
998 ## - LOCAL CONTROL INFORMATION (RLIN)
Cataloger's name mona.romia
Cataloging process P
First Date, FD (RLIN) 20220327
100 1# - MAIN ENTRY--PERSONAL NAME
Real World Object URI Hamaguchi, Chihiro. |e author.
263 ## - PROJECTED PUBLICATION DATE
Projected publication date 1710
906 ## - LOCAL DATA ELEMENT F, LDF (RLIN)
a 0
b ibc
c orignew
d 2
e epcn
f 20
g y-gencatlg
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Home library Current library Date acquired Cost, normal purchase price Total Checkouts Full call number Barcode Date last seen Cost, replacement price Price effective from Koha item type
    Dewey Decimal Classification   Not For Loan Engineering The Knowledge Hub Library The Knowledge Hub Library 08/17/2020 929.00   537.622 HA.B 2017 190378 08/17/2020 929.00 08/17/2020 Books