MARC details
000 -LEADER |
fixed length control field |
03521nam a2200373 i 4500 |
001 - CONTROL NUMBER |
control field |
19861123 |
005 - DATE AND TIME OF LATEST TRANSACTION |
control field |
20220327075950.0 |
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
fixed length control field |
170803s2017 nyua b 001 0 eng d |
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER |
LC control number |
2017951190 |
020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
International Standard Book Number |
9783319668598 |
Qualifying information |
hardback |
040 ## - CATALOGING SOURCE |
Original cataloging agency |
DLC |
Language of cataloging |
eng |
Description conventions |
rda |
Transcribing agency |
DLC |
Modifying agency |
EG-CaTKH |
042 ## - AUTHENTICATION CODE |
Authentication code |
pcc |
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER |
Classification number |
537.622 HA.B 2017 |
Edition number |
22 |
100 1# - MAIN ENTRY--PERSONAL NAME |
Personal name |
Hamaguchi, Chihiro, |
Dates associated with a name |
1937- |
Relator term |
author. |
245 10 - TITLE STATEMENT |
Title |
Basic semiconductor physics / |
Statement of responsibility, etc. |
Chihiro Hamaguchi. |
250 ## - EDITION STATEMENT |
Edition statement |
Third edition. |
264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
Place of production, publication, distribution, manufacture |
Cham, Switzerland : |
Name of producer, publisher, distributor, manufacturer |
Springer, |
Date of production, publication, distribution, manufacture, or copyright notice |
2017. |
300 ## - PHYSICAL DESCRIPTION |
Extent |
xxi, 709 pages : |
Other physical details |
illustrations ; |
Dimensions |
24 cm. |
336 ## - CONTENT TYPE |
Content type term |
text |
Content type code |
txt |
Source |
rdacontent |
337 ## - MEDIA TYPE |
Media type term |
unmediated |
Media type code |
n |
Source |
rdamedia |
338 ## - CARRIER TYPE |
Carrier type term |
volume |
Carrier type code |
nc |
Source |
rdacarrier |
490 1# - SERIES STATEMENT |
Series statement |
Graduate texts in physics, |
International Standard Serial Number |
1868-4513 |
504 ## - BIBLIOGRAPHY, ETC. NOTE |
Bibliography, etc. note |
Includes bibliographical references and index. |
505 0# - FORMATTED CONTENTS NOTE |
Formatted contents note |
Preface to the Third Edition -- Energy Band Structures of Semiconductors -- Cyclotron Resonance and Energy Band Structures -- Wannier Function and Effective Mass Approximation -- Optical Properties 1 -- Optical Properties 2 -- Electron-Phonon Interaction and Electron Transport -- Magnetotransport Phenomena -- Quantum Structures -- Light Emission and Laser. |
520 ## - SUMMARY, ETC. |
Summary, etc. |
This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency. . |
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM |
Topical term or geographic name entry element |
Semiconductors. |
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE |
Uniform title |
Graduate texts in physics. |
International Standard Serial Number |
1868-4513. |
942 ## - ADDED ENTRY ELEMENTS (KOHA) |
Source of classification or shelving scheme |
Dewey Decimal Classification |
Koha item type |
Books |
998 ## - LOCAL CONTROL INFORMATION (RLIN) |
Cataloger's name |
mona.romia |
Cataloging process |
P |
First Date, FD (RLIN) |
20220327 |
100 1# - MAIN ENTRY--PERSONAL NAME |
Real World Object URI |
Hamaguchi, Chihiro. |e author. |
263 ## - PROJECTED PUBLICATION DATE |
Projected publication date |
1710 |
906 ## - LOCAL DATA ELEMENT F, LDF (RLIN) |
a |
0 |
b |
ibc |
c |
orignew |
d |
2 |
e |
epcn |
f |
20 |
g |
y-gencatlg |