000			03521nam a2200373 i 4500
999			_c325 _d325
001			19861123
005			20220327075950.0
008			170803s2017 nyua b 001 0 eng d
010			_a 2017951190
020			_a9783319668598 _qhardback
040			_aDLC _beng _erda _cDLC _dEG-CaTKH
042			_apcc
082	0	0	_a537.622 HA.B 2017 _222
100	1		_aHamaguchi, Chihiro, _d1937- _eauthor.
245	1	0	_aBasic semiconductor physics / _cChihiro Hamaguchi.
250			_aThird edition.
264		1	_aCham, Switzerland : _bSpringer, _c2017.
300			_axxi, 709 pages : _billustrations ; _c24 cm.
336			_atext _btxt _2rdacontent
337			_aunmediated _bn _2rdamedia
338			_avolume _bnc _2rdacarrier
490	1		_aGraduate texts in physics, _x1868-4513
504			_aIncludes bibliographical references and index.
505	0		_aPreface to the Third Edition -- Energy Band Structures of Semiconductors -- Cyclotron Resonance and Energy Band Structures -- Wannier Function and Effective Mass Approximation -- Optical Properties 1 -- Optical Properties 2 -- Electron-Phonon Interaction and Electron Transport -- Magnetotransport Phenomena -- Quantum Structures -- Light Emission and Laser.
520			_aThis book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency. .
650			_aSemiconductors.
830		0	_aGraduate texts in physics. _x1868-4513.
942			_2ddc _cBK
998			_amona.romia _bP _d20220327
100	1		_1Hamaguchi, Chihiro. |e author.
263			_a1710
906			_a0 _bibc _corignew _d2 _eepcn _f20 _gy-gencatlg