000			02665cam a2200385 i 4500
001			21586501
005			20220816145252.0
008			200624s2021 nju b 001 0 eng d
010			_a 2020028806
020			_a9781119429111 _qhardback
040			_aDLC _beng _cDLC _erda _dEG-CaTKH
042			_apcc
050	0	0	_aTK7871.85 _b.S988 2021
082	0	0	_a537.622 SZ.P 2021 _223
100	1		_aSze, S. M., _d1936- _eauthor.
245	1	0	_aPhysics of semiconductor devices / _cS.M. Sze, Yiming Li, Kwok K. Ng.
250			_aFourth edition.
263			_a2010
264		1	_aHoboken, NJ, USA : _bWiley, _c2021.
300			_axii, 931 pages : _billustrations ; _c24 cm.
336			_atext _btxt _2rdacontent
337			_aunmediated _bn _2rdamedia
338			_avolume _bnc _2rdacarrier
504			_aIncludes bibliographical references and index.
520			_a"Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)"-- _cProvided by publisher.
650		0	_aSemiconductors.
700	1		_aNg, Kwok Kwok, _d1952- _eauthor.
700	1		_aLi, Yiming _c(Professor of electrical engineering), _eauthor.
776	0	8	_iOnline version: _aSze, S. M., 1936- _tPhysics of semiconductor devices _bFourth edition. _dHoboken, NJ, USA : Wiley, 2021. _z9781119429135 _w(DLC) 2020028807
906			_a7 _bcbc _corignew _d1 _eecip _f20 _gy-gencatlg
942			_2ddc _cBK
998			_ayomna nassar _bP _d20220816
998			_amona.romia _bR _d20220816
999			_c1106 _d1106